JAEA
  • help
  • PC | SP
  • JP | EN
          
Refine your search：     
Report No.
 - 
Clear All
Search Results: Records 1-3 displayed on this page of 3
  • 1

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Defect layer in SiO$$_2$$-SiC interface proved by a slow positron beam

Maekawa, Masaki; Kawasuso, Atsuo; Yoshikawa, Masahito; Miyashita, Atsumi; Suzuki, Ryoichi*; Odaira, Toshiyuki*

Physica B; Condensed Matter, 376-377, p.354 - 357, 2006/04

https://doi.org/10.1016/j.physb.2005.12.091
 Times Cited Count：2 Percentile：12.56(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Structure of SiO$$_2$$/4H-SiC interface probed by positron annihilation spectroscopy

Maekawa, Masaki; Kawasuso, Atsuo; Yoshikawa, Masahito; Miyashita, Atsumi; Suzuki, Ryoichi*; Odaira, Toshiyuki*

Physical Review B, 73(1), p.014111_1 - 014111_9, 2006/01

https://doi.org/10.1103/PhysRevB.73.014111
 Times Cited Count：20 Percentile：64.39(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Structural defects in SiO$$_2$$/SiC interface probed by a slow positron beam

Maekawa, Masaki; Kawasuso, Atsuo; Chen, Z. Q.; Yoshikawa, Masahito; Suzuki, Ryoichi*; Odaira, Toshiyuki*

Applied Surface Science, 244(1-4), p.322 - 325, 2005/05

https://doi.org/10.1016/j.apsusc.2004.10.085
 Times Cited Count：13 Percentile：49.91(Chemistry, Physical)

no abstracts in English

3 (Records 1-3 displayed on this page)
  • 1